Scanning Thermal Microscopy Probes

KNT-SThM-3an
The new KNT-SThM-3an probe replaces the KNT-SThM-2an, which is no longer manufactured. The Unmounted SThM probe may be used for the following methods and applications:
- Combined Thermal and Topographical Imaging
- Temperature Measurement
- Thermal Conductivity Mapping
- Failure Analysis
The Kelvin Nanotechnology KNT-SThM-3an scanning thermal microscopy (SThM) probe is a monolithic, batch fabricated AFM probe for best in class temperature and thermal conductivity mapping, offering excellent flexibility with a standard low spring constant Si3N4 cantilever for easy scanning and high resolution..
Applications
Characterisation of:
- Polymer layers
- Semiconductor & electrical devices
- Biological samples
- Thin films
Pricing
One box of KNT-SThM-3an contains 5 probes:
- UK Price: £1,722 (ex VAT)
- EU Sales: Quotation upon request
- International Sales: Quotation upon request
Please use our contact form or e-mail us for a quotation
Further Information
A micro-fabricated SThM probe consisting a silicon nitride AFM cantilever and a thin film palladium thermistor located at the tip. Manufactured using multi-level electron beam lithography pioneered by the University of Glasgow, these probes combine a batch-fabricated functionalised probe technology with a conventional style chip and cantilever. Connection by gold tracks and pads allows biasing of the thermistor to perform temperature sensing and heat flow experiments. Other features include series NiCr resistors on the probe base to protect from ESD and match total resistance to most Wheatstone bridges, and a ribbed cantilever to increase stiffness and counteract temperature induced bending of the cantilever in hot environments. Sub 100nm topographic and thermal spatial resolution can be achieved.
Probe Base | 1.5mm × 3.3mm | Tip Height | 8µm (Typ) |
Cantilever (Silicon Nitride) | 145µm × 120µm × 0.4µm | Current Max | 2.5mA DC |
Tip Resistor Metal | 8nm NiCr + 40nm Pd * | Spring Constant | 0.40 – 0.7 N/m |
Track and Pad Metal | 8nm NiCr + 145nm Au | Maximum Temperature | 150 C |
Resistance | 225 – 425Ω (Typ 300Ω) | Series Resistors | 2 × ~ 90 Ω |
Tip Radius | < 100 nm | ||
* E-beam evaporated on an angled surface at the tip so thickness on tip is 5nm NiCr and 25nm Pd. |